Vacancy defects in photoexcited GaAs studied by positron two-dimensional angular correlation of annihilation radiation
- Department of Physics, Brookhaven National Laboratory, Upton, New York 11973 (United States)
- Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States)
- AT T Bell Laboratories, Murray Hill, New Jersey 07974 (United States)
The positron two-dimensional angular correlation of annihilation radiation (2D-ACAR) technique has been coupled with optical excitation to study the native point defects in semi-insulating GaAs. The As vacancy was observed below [similar to]170 K when illuminated with 1.41[plus minus]0.07 eV photons. The temperature dependence of the 2D-ACAR spectra, with and without illumination, was studied. Data were also collected at 25 K as a function of the intensity of infrared light. The 2D-ACAR spectra reflect the [ital e][sup +]-[ital e][sup [minus]] pair momentum distribution at or near the vacancy and provides symmetry and electronic structure information, which can be used as a unique defect signature for the vacancy.
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 7016951
- Journal Information:
- Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 50:15; ISSN PRBMDO; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360606* -- Other Materials-- Physical Properties-- (1992-)
ANGULAR CORRELATION
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLE DETECTION
CORRELATIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DETECTION
ELECTRONIC STRUCTURE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
PNICTIDES
POINT DEFECTS
POSITRON DETECTION
RADIATION DETECTION
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
VACANCIES