Ion-beam synthesis and stability of GaAs nanocrystals in silicon

Journal Article · Mon Apr 01 04:00:00 EST 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.116143· OSTI ID:279977

White, C W; Budai, J D; Zhu, J G; Withrow, S P ^[1]; Aziz, M J ^[2]

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1. Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 37831-6057 (United States)
2. Harvard University, 29 Oxford Street, Cambridge, Massachusetts 02138 (United States)

Sequential implantation of Ga and As into silicon followed by thermal annealing has been used to synthesize GaAs buried inside silicon. The GaAs exists in the form of nanocrystals which are three-dimensionally oriented with respect to the silicon matrix. Thermodynamic criteria which are important in determining whether the desired compound will form are discussed. {copyright} {ital 1996 American Institute of Physics.}

• OSTI ID: 279977
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 68; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ARSENIC ADDITIONS
COMPOSITE MATERIALS
FABRICATION
GALLIUM ADDITIONS
GALLIUM ARSENIDES
ION IMPLANTATION
NANOSTRUCTURES
SILICON
SYNTHESIS