Synthesis of GaN by N ion implantation in GaAs (001)
- Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720 (United States)
- Instituto de Fisica, UFRGS, 91501 Porto Alegre (Brazil)
Both the hexagonal and cubic GaN phases were synthesized in GaAs (001) by 50 keV N ion implantation at 380 {degree}C and subsequent furnace annealing at 850--950 {degree}C for 10 min--2 h. For a fluence of 1.5{times}10{sup 17} cm{sup {minus}2}, transmission electron microscopy revealed that cubic GaN epitaxially crystallizes as precipitates in the GaAs matrix. A cubic-to-hexagonal GaN phase transition was observed for extended thermal anneals. By increasing the N fluence to 3{times}10{sup 17} cm{sup {minus}2}, a continuous buried layer of randomly oriented hexagonal-GaN nanocrystals was produced. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- Research Organization:
- Lawrence Berkeley National Laboratory
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 124275
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 67; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
MeV B compensation implants into n -type GaAs and InP
Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN
Ion implantation doping and isolation of GaN
Journal Article
·
Tue Sep 15 00:00:00 EDT 1992
· Journal of Applied Physics; (United States)
·
OSTI ID:7266441
Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN
Journal Article
·
Thu Jul 01 00:00:00 EDT 1999
· Journal of Vacuum Science and Technology, A
·
OSTI ID:359784
Ion implantation doping and isolation of GaN
Journal Article
·
Mon Sep 04 00:00:00 EDT 1995
· Applied Physics Letters
·
OSTI ID:115784