Microstructure of GaAs nanocrystals formed inside single crystalline silicon
- Oak Ridge National Lab., TN (United States); and others
Semiconductor nanocrystals exhibit novel properties that are important for electronic and opto-electronic device applications. Many methods have been developed to synthesize semiconductor nanocrystals. Among them is the ion implantation technique, which is compatible with the semiconductor technology. It has been recently reported that the compound semiconductor GaAs can be formed inside Si by sequential implantation of Ga and As and thermal annealing. In this study, GaAs nanocrystals were formed by sequential implantation of As and Ga, with the same dose of 1 x 10{sup 17} cm{sup -2}, into (100) Si substrates at 550{degrees}C. The implantation energies were chosen so that the Ga and As ions are overlapped over a few hundred nanometers in depth. The samples were then annealed at 1000{degrees}C for 1 h in flowing Ar + 4%H{sub 2} atmosphere to form GaAs precipitates. Transmission electron microscopy (TEM) has been used to study the microstructures of these samples.
- DOE Contract Number:
- AC05-96OR22464
- OSTI ID:
- 468945
- Report Number(s):
- CONF-960877-; TRN: 97:001308-0203
- Resource Relation:
- Conference: Microscopy and microanalysis 1996, Minneapolis, MN (United States), 11-15 Aug 1996; Other Information: PBD: 1996; Related Information: Is Part Of Microscopy and microanalysis 1996; Bailey, G.W.; Corbett, J.M.; Dimlich, R.V.W.; Michael, J.R.; Zaluzec, N.J. [eds.]; PB: 1107 p.
- Country of Publication:
- United States
- Language:
- English
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