Evaluation of GaAs low noise and power MMIC technologies to neutron, ionizing dose and dose rate effects
- Thomson CSF-TCS, Orsay (France)
- Thomson CSF-RGS/DEN, Gennevilliers (France)
An evaluation program of Thomson CSF-TCS GaAs low noise and power MMIC technologies to 1 MeV equivalent neutron fluence levels, up to 1 {times} 10{sup 15} n/cm{sup 2}, ionizing 1.17--1.33 MeV CO{sup 60} dose levels in excess of 200 Mrad(GaAs) and dose rate levels reaching 1.89 {times} 10{sup 11} rad(GaAs)/s is presented in terms of proper components and parameter choices, DC/RF electrical measurements and test methods under irradiation. Experimental results are explained together with drift analyses of electrical parameters that have determined threshold limits of component degradations. Modelling the effects of radiation on GaAs components relies on degradation analysis of active layer which appears to be the most sensitive factor. MMICs degradation under neutron fluence was simulated from irradiated FET data. Finally, based on sensitivity of technological parameters, rad-hard design including material, technology and MMIC design enhancement is discussed.
- OSTI ID:
- 277720
- Report Number(s):
- CONF-9509107-; ISSN 0018-9499; TRN: 96:018158
- Journal Information:
- IEEE Transactions on Nuclear Science, Vol. 43, Issue 3Pt1; Conference: 3. European symposium on radiation and its effects on components and systems (RADECS 95), Arcachon (France), 18-22 Sep 1995; Other Information: PBD: Jun 1996
- Country of Publication:
- United States
- Language:
- English
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