Evaluation of GaAs low noise and power MMIC technologies to neutron, ionizing dose and dose rate effects

Journal Article · Sat Jun 01 00:00:00 EDT 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.510722· OSTI ID:277720

Derewonko, H; Bosella, A; Pataut, G; Perie, D; Pinsard, J L; Sentubery, C ^[1]; Verbeck, C; Bressy, P; Augier, P ^[2]

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1. Thomson CSF-TCS, Orsay (France)
2. Thomson CSF-RGS/DEN, Gennevilliers (France)

An evaluation program of Thomson CSF-TCS GaAs low noise and power MMIC technologies to 1 MeV equivalent neutron fluence levels, up to 1 {times} 10{sup 15} n/cm{sup 2}, ionizing 1.17--1.33 MeV CO{sup 60} dose levels in excess of 200 Mrad(GaAs) and dose rate levels reaching 1.89 {times} 10{sup 11} rad(GaAs)/s is presented in terms of proper components and parameter choices, DC/RF electrical measurements and test methods under irradiation. Experimental results are explained together with drift analyses of electrical parameters that have determined threshold limits of component degradations. Modelling the effects of radiation on GaAs components relies on degradation analysis of active layer which appears to be the most sensitive factor. MMICs degradation under neutron fluence was simulated from irradiated FET data. Finally, based on sensitivity of technological parameters, rad-hard design including material, technology and MMIC design enhancement is discussed.

• OSTI ID: 277720
• Report Number(s): CONF-9509107--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3Pt1 Vol. 43; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
COBALT 60
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GAMMA RADIATION
INTEGRATED CIRCUITS
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
SPACE FLIGHT