Dosimetry and total dose radiation testing of GaAs devices

Conference · Mon Nov 30 23:00:00 EST 1987 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:7006004

Meulenberg, A; Dozier, C M; Anderson, W T; Mittleman, S D; Zugich, M H; Caefer, C E

Damage to GaAs devices from energetic electrons is shown to rise very rapidly above 600 keV. Therefore, methods of dosimetry that are more sensitive to low-energy electrons (i.e., that determine deposited energy rather than atomic displacement) could be inappropriate for GaAs. For example, a 1-MeV electron irradiation requires an order-of-magnitude lower dose (in rad) to cause the same degradation as a Co/sup 60/ source in a GaAs FET. Such considerations argue against the use of rad dose to define mission radiation requirements and laboratory source calibration for GaAs devices.

• Research Organization: Comsat Labs., Clarksburg, MD (US)
• OSTI ID: 7006004
• Report Number(s): CONF-8707112-
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-34:6; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
654001 -- Radiation & Shielding Physics-- Radiation Physics
Shielding Calculations & Experiments
656002 -- Condensed Matter Physics-- General Techniques in Condensed Matter-- (1987-)
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CALIBRATION
DOSIMETRY
ELECTRON BEAMS
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTERACTIONS
IRRADIATION
LEPTON BEAMS
PARTICLE BEAMS
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TESTING
TRANSISTORS