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Title: Fabrication of boron sputter targets

Patent ·
OSTI ID:27725

A process is disclosed for fabricating high density boron sputtering targets with sufficient mechanical strength to function reliably at typical magnetron sputtering power densities and at normal process parameters. The process involves the fabrication of a high density boron monolithe by hot isostatically compacting high purity (99.9%) boron powder, machining the boron monolithe into the final dimensions, and brazing the finished boron piece to a matching boron carbide (B{sub 4}C) piece, by placing aluminum foil there between and applying pressure and heat in a vacuum. An alternative is the application of aluminum metallization to the back of the boron monolithe by vacuum deposition. Also, a titanium based vacuum braze alloy can be used in place of the aluminum foil. 7 figs.

Research Organization:
Univ. of California (United States)
DOE Contract Number:
W-7405-ENG-48
Assignee:
Univ. Of California, Oakland, CA (United States)
Patent Number(s):
US 5,392,981/A/
Application Number:
PAN: 8-161,605
OSTI ID:
27725
Resource Relation:
Other Information: PBD: 28 Feb 1995
Country of Publication:
United States
Language:
English

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