Method for accurate growth of vertical-cavity surface-emitting lasers
Patent
·
OSTI ID:27717
The authors report a method for accurate growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement to determine the structure of the partially completed VCSEL at a critical point of growth. This information, along with the extracted growth rates, allows imprecisions in growth parameters to be compensated for during growth of the remaining structure, which can then be completed with very accurate critical dimensions. Using this method, they can now routinely grow lasing VCSELs with Fabry-Perot cavity resonance wavelengths controlled to within 0.5%. 4 figs.
- Research Organization:
- AT&T
- DOE Contract Number:
- AC04-76DP00789
- Assignee:
- Sandia Corp., Albuquerque, NM (United States)
- Patent Number(s):
- US 5,397,739/A/
- Application Number:
- PAN: 8-099,035
- OSTI ID:
- 27717
- Resource Relation:
- Other Information: PBD: 14 Mar 1995
- Country of Publication:
- United States
- Language:
- English
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