skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Method for accurate growth of vertical-cavity surface-emitting lasers

Patent ·
OSTI ID:869790
 [1];  [1];  [1]
  1. Albuquerque, NM
+ Show Author Affiliations

We report a method for accurate growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement to determine the structure of the partially completed VCSEL at a critical point of growth. This information, along with the extracted growth rates, allows imprecisions in growth parameters to be compensated for during growth of the remaining structure, which can then be completed with very accurate critical dimensions. Using this method, we can now routinely grow lasing VCSELs with Fabry-Perot cavity resonance wavelengths controlled to within 0.5%.

Research Organization:
AT&T
DOE Contract Number:
AC04-76DP00789
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
US 5397739
OSTI ID:
869790
Country of Publication:
United States
Language:
English

References (4)

Real‐time optical diagnostics for epitaxial growth
  • Aspnes, D. E.; Quinn, W. E.; Gregory, S.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 9, Issue 3 https://doi.org/10.1116/1.577332
journal May 1991
Molecular beam epitaxy growth of vertical cavity optical devices with in situ corrections journal September 1992
Diffuse optical reflectivity measurements on GaAs during molecular‐beam epitaxy processing
  • Lavoie, C.; Johnson, S. R.; Mackenzie, J. A.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 10, Issue 4 https://doi.org/10.1116/1.577880
journal July 1992
Method for accurate growth of vertical‐cavity surface‐emitting lasers journal March 1993

Similar Records

Method for accurate growth of vertical-cavity surface-emitting lasers
Journal Article · Mon Mar 15 00:00:00 EST 1993 · Applied Physics Letters; (United States) · OSTI ID:869790
Method for accurate growth of vertical-cavity surface-emitting lasers
Patent · Tue Mar 14 00:00:00 EST 1995 · OSTI ID:869790
Highly uniform and reproducible vertical-cavity surface-emitting lasers grown by metalorganic vapor phase epitaxy with in-situ reflectometry
Journal Article · Tue Oct 01 00:00:00 EDT 1996 · IEEE Photonics Technology Letters · OSTI ID:869790
+3 more

Related Subjects

method
accurate
growth
vertical-cavity
surface-emitting
lasers
report
vcsels
single
reflectivity
spectrum
measurement
determine
structure
partially
completed
vcsel
critical
information
extracted
rates
allows
imprecisions
parameters
compensated
remaining
dimensions
routinely
grow
lasing
fabry-perot
cavity
resonance
wavelengths
controlled
cavity surface
surface-emitting laser
growth rate
vertical-cavity surface-emitting
partially completed
surface-emitting lasers
critical dimension
growth rates
emitting laser
fabry-perot cavity
cavity resonance
resonance wavelengths
resonance wavelength
emitting lasers
accurate growth
critical dimensions
/438/117/