Method for accurate growth of vertical-cavity surface-emitting lasers
Journal Article
·
· Applied Physics Letters; (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
We report a method for accurate growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement to determine the structure of the partially completed VCSEL at a critical point of growth. This information, along with the extracted growth rates, allows imprecisions in growth parameters to be compensated for during growth of the remaining structure, which can then be completed with very accurate critical dimensions. Using this method, we can now routinely grow lasing VCSELs with Fabry--Perot cavity resonance wavelengths controlled to within 0.5%.
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6852928
- Journal Information:
- Applied Physics Letters; (United States), Vol. 62:11; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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