Focused ion beam deposited tungsten contacts to silicon
- IBM Analytical Services, Hopewell Junction, NY (United States)
Focused ion beam systems have found many applications in integrated circuit failure analysis since the first systems were made about ten years ago. In this paper the authors describe a new application, making tungsten contacts to single crystal and polycrystalline silicon for electrical characterization of circuit nodes that are normally inaccessible to traditional mechanical probes. This can be useful for measuring at buried contacts, local interconnects, and FET`s with integrated source/drains. Experiments are discussed in regard to FIB operation for milling to expose the area to be contacted and for depositing W to form the contact. Electrical characterization of test structures before and after making the FIB contacts are shown. Applications for applying the technique to isolating defects will be discussed.
- OSTI ID:
- 260537
- Report Number(s):
- CONF-951156--; ISBN 0-87170-554-0
- Country of Publication:
- United States
- Language:
- English
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