Focused ion beam insulator deposition
- Hewlett-Packard Co., Corvallis, OR (United States)
Focused Ion Beam (FIB) repairs and modifications to integrated circuits have been somewhat limited in the past due to the physical limitations imposed by the nodes of interest being buried under metal layers, the need for multiple layers of FIB generated interconnects, and the like. With the advent of FIB deposited INSULATOR materials, integrated circuit modifications can now be much more complex. The two primary goals of this project were (1) to determine the appropriateness of FIB insulator deposition for aiding FIB connections to metal nodes buried under power busses, and (2) development of a technique to do this. The work presented in this paper includes the development and characterization phases of adding INSULATION DEPOSITION to a FEI 611 FIB system, the problems encountered, their work around, and the aforementioned application of this technology.
- OSTI ID:
- 260496
- Report Number(s):
- CONF-951156--; ISBN 0-87170-554-0
- Country of Publication:
- United States
- Language:
- English
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