Modeling the cosmic-ray-induced soft-error rate in integrated circuits: An overview

Journal Article · Mon Jan 01 04:00:00 EST 1996 · IBM Journal of Research and Development

DOI:https://doi.org/10.1147/rd.401.0077· OSTI ID:248103

Srinivasan, G R

This paper is an overview of the concepts and methodologies used to predict soft-error rates (SER) due to cosmic and high-energy particle radiation in integrated circuit chips. The paper emphasizes the need for the SER simulation using the actual chip circuit model which includes device, process, and technology parameters as opposed to using either the discrete device simulation or generic circuit simulation that is commonly employed in SER modeling. Concepts such as funneling, event-by-event simulation, nuclear history files, critical charge, and charge sharing are examined. Also discussed are the relative importance of elastic and inelastic nuclear collisions, rare event statistics, and device vs. circuit simulations. The semi-empirical methodologies used in the aerospace community to arrive at SERs [also referred to as single-event upset (SEU) rates] in integrated circuit chips are reviewed. This paper is one of four in this special issue relating to SER modeling. Together, they provide a comprehensive account of this modeling effort, which has resulted in a unique modeling tool called the Soft-Error Monte Carlo Model, or SEMM.

• Sponsoring Organization: USDOE
• OSTI ID: 248103
• Journal Information: IBM Journal of Research and Development, Journal Name: IBM Journal of Research and Development Journal Issue: 1 Vol. 40; ISSN 0018-8646; ISSN IBMJAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ELASTIC SCATTERING
FAILURES
INELASTIC SCATTERING
INTEGRATED CIRCUITS
IONIZING RADIATIONS
MATHEMATICAL MODELS
PHYSICAL RADIATION EFFECTS
PROBABILISTIC ESTIMATION
S CODES