Nuclear physics of cosmic ray interaction with semiconductor materials: Particle induced soft errors from a physicist`s perspective

Journal Article · Mon Jan 01 04:00:00 EST 1996 · IBM Journal of Research and Development

DOI:https://doi.org/10.1147/rd.401.0091· OSTI ID:248104

Tang, H H.K.

The key issues of cosmic-ray-induced soft-error rates, SER (also referred to as single-event upset, SEU, rates) in microelectronic devices are discussed from the viewpoint of fundamental atomic and nuclear interactions between high-energy particles and semiconductors. From sea level to moderate altitudes, the cosmic ray spectrum is dominated by three particle species: nucleons (protons and neutrons), pions, and muons. The characteristic features of high-energy nuclear reactions of these particles with light elements are reviewed. A major cause of soft errors is identified to be the ionization electron-hole pairs induced by the secondary nuclear fragments produced in certain processes. These processes are the inelastic collisions between the cosmic ray particles and nuclei in the host material. A state-of-the-art nuclear spallation reaction model, NUSPA, is developed to simulate these reactions. This model is tested and validated by a large set of nuclear experiments. It is used to generate the crucial database for the soft-error simulators which are currently used throughout IBM for device and circuit analysis. The relative effectiveness of nucleons, pions, and muons as soft-error-inducing agents is evaluated on the basis of nuclear reaction rate calculations and energy-deposition analysis.

• Sponsoring Organization: USDOE
• OSTI ID: 248104
• Journal Information: IBM Journal of Research and Development, Journal Name: IBM Journal of Research and Development Journal Issue: 1 Vol. 40; ISSN 0018-8646; ISSN IBMJAE
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
CHARGE COLLECTION
COMPUTERIZED SIMULATION
COSMIC RADIATION
ELECTRON PAIRS
ENERGY ABSORPTION
INELASTIC SCATTERING
MICROELECTRONIC CIRCUITS
PHYSICAL RADIATION EFFECTS
RADIATION TRANSPORT
SEMICONDUCTOR MATERIALS