Photonic Crystal Surface Emitting GaSb-Based Type-I Quantum Well Diode Lasers

Shterengas, Leon; Kipshidze, Gela; Stein, Aaron; Lee, Won Jae; Liu, Ruyan; Belenky, Gregory

doi:10.1109/jstqe.2024.3438710

Photonic Crystal Surface Emitting GaSb-Based Type-I Quantum Well Diode Lasers

Journal Article · Mon Aug 05 04:00:00 EDT 2024 · IEEE Journal of Selected Topics in Quantum Electronics

DOI:https://doi.org/10.1109/jstqe.2024.3438710· OSTI ID:2452786

^[1]; ^[1]; Stein, Aaron ^[2]; Lee, Won Jae ^[1]; Liu, Ruyan ^[1]; Belenky, Gregory ^[1]

Stony Brook Univ., NY (United States)
Brookhaven National Laboratory (BNL), Upton, NY (United States)

The GaSb-based epitaxially regrown monolithic diode PCSELs operating near 2 μm at room temperature in continuous wave regime and generating 30 mW of output power from 200 μm diameter aperture have been designed and fabricated. Here, the devices demonstrated CW threshold current density of about 500 A/cm ². The laser output power was enhanced thanks to increased buried void area fill-factor in the photonic crystal layer with multiple voids per unit cell. The PCSEL generated ultra-low divergence donut shape beams at the currents near threshold. At higher injection currents, the device brightness was limited by excitation of the higher order lateral modes. Generation of the vector-vortex beams of different types by different band edge states of the buried photonic crystal was observed.

Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF); US Army Research Office (ARO)

Grant/Contract Number:: SC0012704

OSTI ID:: 2452786

Report Number(s):: BNL--226211-2024-JAAM

Journal Information:: IEEE Journal of Selected Topics in Quantum Electronics, Journal Name: IEEE Journal of Selected Topics in Quantum Electronics Journal Issue: 2 Vol. 31; ISSN 1077-260X

Publisher:: IEEE Lasers and Electro-optics SocietyCopyright Statement

Country of Publication:: United States

Language:: English

References (12)

Electrically Pumped Epitaxially Regrown GaSb‐Based Type‐I Quantum‐Well Surface‐Emitting Lasers with Buried High‐Index‐Contrast Photonic Crystal Layer Shterengas, Leon; Liu, Ruiyan; Kipshidze, Gela physica status solidi (RRL) – Rapid Research Letters, Vol. 16, Issue 1 https://doi.org/10.1002/pssr.202100425	journal	October 2021
Comparison of Thermal and Atomic-Hydrogen-Assisted Oxide Desorption Methods for Regrowth of GaSb-Based Cascade Diode Lasers Lee, Wonjae; Shterengas, Leon; Hosoda, Takashi Journal of Electronic Materials, Vol. 50, Issue 10 https://doi.org/10.1007/s11664-021-09091-4	journal	July 2021
Watt-class high-power, high-beam-quality photonic-crystal lasers Hirose, Kazuyoshi; Liang, Yong; Kurosaka, Yoshitaka Nature Photonics, Vol. 8, Issue 5 https://doi.org/10.1038/nphoton.2014.75	journal	April 2014
Double-lattice photonic-crystal resonators enabling high-brightness semiconductor lasers with symmetric narrow-divergence beams Yoshida, Masahiro; De Zoysa, Menaka; Ishizaki, Kenji Nature Materials, Vol. 18, Issue 2 https://doi.org/10.1038/s41563-018-0242-y	journal	December 2018
Wide-bandgap GaN-based watt-class photonic-crystal lasers Emoto, Kei; Koizumi, Tomoaki; Hirose, Masaki Communications Materials, Vol. 3, Issue 1 https://doi.org/10.1038/s43246-022-00288-6	journal	October 2022
Void engineering in epitaxially regrown GaAs-based photonic crystal surface emitting lasers by grating profile design McKenzie, A. F.; King, B. C.; Rae, K. J. Applied Physics Letters, Vol. 118, Issue 2 https://doi.org/10.1063/5.0035038	journal	January 2021
Interband Cascade Lasers With Low Threshold Powers and High Output Powers Vurgaftman, I.; Bewley, W. W.; Canedy, C. L. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 19, Issue 4 https://doi.org/10.1109/JSTQE.2012.2237017	journal	July 2013
Cascade Pumping of 1.9–3.3 μm Type-I Quantum Well GaSb-Based Diode Lasers Shterengas, Leon; Kipshidze, Gela; Hosoda, Takashi IEEE Journal of Selected Topics in Quantum Electronics, Vol. 23, Issue 6 https://doi.org/10.1109/JSTQE.2017.2687763	journal	November 2017
High-power CW oscillation of 1.3-µm wavelength InP-based photonic-crystal surface-emitting lasers Itoh, Yuhki; Kono, Naoya; Inoue, Daisuke Optics Express, Vol. 30, Issue 16 https://doi.org/10.1364/OE.461048	journal	July 2022
High-power narrow spectrum GaSb-based DBR lasers emitting near 21 µm Jiang, Jiang; Shterengas, Leon; Kipshidze, Gela Optics Letters, Vol. 46, Issue 8 https://doi.org/10.1364/OL.422536	journal	January 2021
Improved power and far-field pattern of surface-emitting quantum cascade lasers with strain compensation to operate at 4.3 μm Yao, Yuanzhao; Ikeda, Naoki; Chalimah, Siti Japanese Journal of Applied Physics, Vol. 61, Issue 5 https://doi.org/10.35848/1347-4065/ac5dbb	journal	April 2022
Air-Hole Retained Growth by Molecular Beam Epitaxy for Fabricating GaAs-Based Photonic-Crystal Lasers Nishimoto, Masaya; Ishizaki, Kenji; Maekawa, Kyohei Applied Physics Express, Vol. 6, Issue 4 https://doi.org/10.7567/APEX.6.042002	journal	April 2013

Similar Records

Electrically Pumped Epitaxially Regrown GaSb-Based Type-I Quantum-Well Surface-Emitting Lasers with Buried High-Index-Contrast Photonic Crystal Layer

Journal Article · Sat Sep 25 00:00:00 EDT 2021 · Physica Status Solidi rrl · OSTI ID:1830202

Photonic Crystal Surface Emitting Diode Lasers with λ near 2 µm

Journal Article · Mon Nov 21 23:00:00 EST 2022 · Photonics · OSTI ID:1922722

Cascade Pumping of 1.9–3.3 μm Type-I Quantum Well GaSb-Based Diode Lasers

Journal Article · Fri Mar 24 00:00:00 EDT 2017 · IEEE Journal of Selected Topics in Quantum Electronics · OSTI ID:1389247

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY

Photonic Crystal Surface Emitting GaSb-Based Type-I Quantum Well Diode Lasers

Citation Formats

References (12)

Similar Records

Related Subjects