Electrically Pumped Epitaxially Regrown GaSb-Based Type-I Quantum-Well Surface-Emitting Lasers with Buried High-Index-Contrast Photonic Crystal Layer

Shterengas, Leon; Liu, Ruiyan; Kipshidze, Gela; Stein, Aaron; Lee, Won Jae; Hosoda, Takashi; Zakharov, Dmitri N.; Kisslinger, Kim; Belenky, Gregory

doi:10.1002/pssr.202100425

Electrically Pumped Epitaxially Regrown GaSb-Based Type-I Quantum-Well Surface-Emitting Lasers with Buried High-Index-Contrast Photonic Crystal Layer

Journal Article · Sat Sep 25 00:00:00 EDT 2021 · Physica Status Solidi rrl

DOI:https://doi.org/10.1002/pssr.202100425· OSTI ID:1830202

^[1]; Liu, Ruiyan ^[1]; Kipshidze, Gela ^[1]; Stein, Aaron ^[2]; Lee, Won Jae ^[1]; Hosoda, Takashi ^[1]; Zakharov, Dmitri N. ^[2]; Kisslinger, Kim ^[2]; Belenky, Gregory ^[1]

Stony Brook Univ., NY (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States)

Epitaxially regrown electrically pumped photonic crystal surface-emitting lasers (PCSELs) emitting near 2 and 2.6 μm are designed, fabricated, and characterized. A high-index-contrast photonic crystal layer is incorporated into the GaSb-based laser heterostructure by air-hole-retaining epitaxial regrowth. A square lattice of triangular holes is etched in the top waveguide core layer of the incomplete laser heterostructure. The nanopatterned surface is subsequently cleaned and regrown with AlGaAsSb p-cladding material. Transmission electron microscopy studies demonstrate uniform regrowth over the nanopatterned GaSb surface. The selected regrowth regimes yield a buried 2D array of elongated air-holes. The diode PCSELs based on moderately etched nanopatterns demonstrate band-edge lasing near 2 μm up to room temperatures. The cascade diode PCSELs operate near 2.6 μm with minimum threshold current densities of about 500 A cm^-2 achieved at 180 K. The devices generate mW level output in narrow divergence beam emitted from the window in substrate contact. The angle-resolved electroluminescence measurements reveal a four-sub-band band structure with an apparent photonic bandgap corresponding to the buried high-index-contrast square photonic crystal layer. Finally, the PCSELs made of heterostructures supporting two modes in the vertical direction demonstrate two sets of sub-bands showing anti-crossing-like interaction.

View Accepted Manuscript (DOE)

Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); US Army Research Office (ARO)

Grant/Contract Number:: SC0012704

OSTI ID:: 1830202

Report Number(s):: BNL--222378-2021-JAAM

Journal Information:: Physica Status Solidi rrl, Journal Name: Physica Status Solidi rrl Journal Issue: 1 Vol. 16; ISSN 1862-6254

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Electrically Pumped Epitaxially Regrown GaSb-Based Type-I Quantum-Well Surface-Emitting Lasers with Buried High-Index-Contrast Photonic Crystal Layer

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