Photonic Crystal Surface Emitting Diode Lasers with λ near 2 µm

Liu, Ruiyan; Shterengas, Leon; Stein, Aaron; Kipshidze, Gela; Zakharov, Dmitri; Kisslinger, Kim; Belenky, Gregory L.

doi:10.3390/photonics9120891

Photonic Crystal Surface Emitting Diode Lasers with λ near 2 µm

Journal Article · Mon Nov 21 23:00:00 EST 2022 · Photonics

DOI:https://doi.org/10.3390/photonics9120891· OSTI ID:1922722

^[1]; Shterengas, Leon ^[1]; Stein, Aaron ^[2]; Kipshidze, Gela ^[1]; Zakharov, Dmitri ^[2]; ^[2]; Belenky, Gregory L. ^[1]

State University of New York (SUNY), Stony Brook, NY (United States)
Brookhaven National Laboratory (BNL), Upton, NY (United States)

Epitaxially regrown electrically pumped photonic crystal surface emitting lasers (PCSELs) operating near 2 µm were designed and fabricated within a III-V-Sb material system. A high-index-contrast photonic crystal layer was incorporated into the laser heterostructures by air-pocket-retaining epitaxial regrowth. Transmission electron microscopy studies confirmed uniform and continuous AlGaAsSb initial growth over the nano-patterned GaSb surface, followed by the development of the air-pockets. The PCSEL threshold current density had a minimal value of ~170 A/cm² in the 160–180 K temperature range when the QW gain spectrum aligned with the Γ₂ band edge of the photonic crystal. The devices operated in a continuous wave regime at 160 K. The divergence and polarization of the multimode laser beam emitted from the 200 µm × 200 µm PCSEL aperture were controlled by filamentation.

View Accepted Manuscript (DOE)

Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704

OSTI ID:: 1922722

Report Number(s):: BNL-223940-2023-JAAM

Journal Information:: Photonics, Journal Name: Photonics Journal Issue: 12 Vol. 9; ISSN 2304-6732

Publisher:: MDPICopyright Statement

Country of Publication:: United States

Language:: English

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