Thermal Stability of the Dot-in-Well Gain Medium for Photonic Crystal Surface Emitting Lasers

Seth, Subhashree; Reilly, Kevin J.; Ince, Fatih F.; Kalapala, Akhil; Gautam, Chhabindra; Rotter, Thomas J.; Neumann, Alexander; Addamane, Sadhvikas; Thompson, Bradley; Gibson, Ricky; Zhou, Weidong; Balakrishnan, Ganesh

doi:10.1109/jstqe.2024.3486672

Thermal Stability of the Dot-in-Well Gain Medium for Photonic Crystal Surface Emitting Lasers

Journal Article · Fri Oct 25 00:00:00 EDT 2024 · IEEE Journal of Selected Topics in Quantum Electronics

DOI:https://doi.org/10.1109/jstqe.2024.3486672· OSTI ID:2477548

^[1]; Reilly, Kevin J. ^[1]; ^[1]; ^[2]; ^[2]; Rotter, Thomas J. ^[1]; Neumann, Alexander ^[1]; ^[3]; Thompson, Bradley ^[4]; ^[4]; ^[2]; ^[1]

Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials (CHTM)
Univ. of Texas, Arlington, TX (United States)
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
Air Force Research Laboratory (AFRL), Wright-Patterson AFB, OH (United States)

Self-assembled quantum dots (QDs) embedded in InGaAs quantum wells (QWs) are used as active regions for photonic-crystal surface-emitting lasers (PCSELs). An epitaxial regrowth method is developed to fabricate the dot-in-well (DWELL) PCSELs. Here, the epitaxial regrowth starts with the growth of a partial laser structure containing bottom cladding, waveguide, active region, and the photonic crystal (PC) layer. The PC layer is patterned to realize the cavity. Subsequently a top cladding layer is regrown to complete the laser structure. During the regrowth of the top cladding layer, the partial laser structure is subjected to high growth temperatures in excess of 600 °C resulting in an unintentional annealing of the active region. This annealing of the active region can alter the QDs by changing their size resulting in a blue shift in photoluminescence (PL) and narrowing PL emission. This effect results in the misaligning of the gain peak and the cavity resonance, resulting in sub-optimal lasing performance. DWELL active regions are known to have better thermal stability compared to both QDs and QWs and could be an ideal candidate for regrown PCSELs. We successfully demonstrate an optically-pumped epitaxially-regrown DWELL PCSEL with an emission wavelength of 1230 nm operating at room temperature. Furthermore, the DWELL active region shows excellent emission wavelength stability and intensity despite the high temperature regrowth process.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: DE Center; Joint Directed Energy Transition Office (JDETO); USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Grant/Contract Number:: NA0003525

OSTI ID:: 2477548

Report Number(s):: SAND--2024-15560J

Journal Information:: IEEE Journal of Selected Topics in Quantum Electronics, Journal Name: IEEE Journal of Selected Topics in Quantum Electronics Journal Issue: 2 Vol. 31; ISSN 1077-260X

Publisher:: IEEE Lasers and Electro-optics SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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