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Cascade Pumping of 1.9–3.3 μm Type-I Quantum Well GaSb-Based Diode Lasers

Journal Article · · IEEE Journal of Selected Topics in Quantum Electronics
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  1. State Univ. of New York (SUNY), Stony Brook, NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
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Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in spectral region from 1.9 to 3.3 μm. Coated devices with ~100-μm-wide aperture and 3-mm-long cavity demonstrated continuous wave (CW) output power of 1.96 W near 2 μm, 980 mW near 3 μm, 500 mW near 3.18 μm, and 360 mW near 3.25 μm at room temperature. The corresponding narrow ridge lasers with nearly diffraction limited beams operate in CW regime with tens of mW of output power up to 60 °C. Two step shallow/deep narrow/wide ridge waveguide devices showed lower threshold currents and higher slope efficiencies compared to single step narrow ridge lasers. Laterally coupled DFB lasers mounted epi-up generated above 10 mW of tunable single frequency CW power at 20 °C near 3.22 μm.

Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States). Center for Functional Nanomaterials
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
SC0012704
OSTI ID:
1389247
Report Number(s):
BNL--114266-2017-JA; KC0403020
Journal Information:
IEEE Journal of Selected Topics in Quantum Electronics, Journal Name: IEEE Journal of Selected Topics in Quantum Electronics Journal Issue: 6 Vol. 23; ISSN 1077-260X
Publisher:
IEEE Lasers and Electro-optics SocietyCopyright Statement
Country of Publication:
United States
Language:
English

Cited By (5)

An ultra-stable 2.9 μm guided-wave chip laser and application to nano-spectroscopy journal November 2019
Electronic states and interband tunneling conditions in type-II quantum well heterostructures journal January 2020
Radiative versus non-radiative recombination in high-efficiency mid-IR InSb/InAs/In(Ga,Al)As/GaAs metamorphic nanoheterostructures journal January 2018
High-temperature and low-threshold interband cascade lasers at wavelengths longer than 6  μm journal December 2017
External cavity type-I quantum well cascade diode lasers with a tuning range of 440  nm near 3  μm journal January 2018

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Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
DFB
GaSBl type-1 QW
cascade lasers
high power
midinfrared
narrow ridge
semiconductor lasers