Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage
- Center for Power Electronics Systems (CPES), Virginia Polytechnic Institute and State University, Bl
- Virginia Polytechnic Institute and State University
- Center of Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg
- ORNL
The development of superjunction structures for use in vertical wide bandgap power devices promise to break the 1-D material limits. Additionally, the possibility of utilizing heteroepitaxial GaN-on-Sapphire wafer for vertical devices can significantly trim the material and device cost. This work introduces a quasi-vertical GaN-on-Sapphire superjunction PN diode design utilizing sputtered p-NiO on the etched GaN fins for superjunction formation. DC breakdown voltage is shown to vary with superjunction charge imbalance and significantly exceed the expected 1-D planar limit of 350V given the epilayer design used. A maximum breakdown voltage of 840 V is extracted for near charge balance conditions limited by leakage current. Dynamic breakdown of the device is characterized as a function of reverse voltage slew rate. A maximum dynamic breakdown voltage of 1160 V under a reverse voltage slew rate of 2000 V/μs is found.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 2440988
- Country of Publication:
- United States
- Language:
- English
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