1 kV Self-Aligned Vertical GaN Superjunction Diode

Ma, Yunwei; Porter, Matthew; Qin, Yuan; Spencer, Joseph; Du, Zhonghao; Xiao, Ming; Wang, Yifan; Kravchenko, Ivan; Briggs, Dayrl P.; Hensley, Dale K.; Udrea, Florin; Tadjer, Marko; Wang, Han; Zhang, Yuhao

doi:10.1109/led.2023.3332855

1 kV Self-Aligned Vertical GaN Superjunction Diode

Journal Article · Wed Nov 15 00:00:00 EST 2023 · IEEE Electron Device Letters

DOI:https://doi.org/10.1109/led.2023.3332855· OSTI ID:2278907

Ma, Yunwei ^[1]; ^[1]; ^[1]; Spencer, Joseph ^[2]; ^[3]; ^[1]; ^[1]; ^[4]; ^[4]; ^[4]; Udrea, Florin ^[5]; ^[6]; Wang, Han ^[7]; ^[1]

Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)
Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States); Naval Research Lab. (NRL), Washington, DC (United States)
Univ. of Southern California, Los Angeles, CA (United States)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Univ. of Cambridge (United Kingdom)
Naval Research Lab. (NRL), Washington, DC (United States)
Univ. of Hong Kong, (Hong Kong)

This work demonstrates vertical GaN superjunction (SJ) diodes fabricated via a novel self-aligned process. The SJ comprises n-GaN pillars wrapped by the charge-balanced p-type nickel oxide (NiO). After the NiO sputtering around GaN pillars, the self-aligned process exposes the top pillar surfaces without the need for additional lithography or a patterned NiO etching which is usually difficult. The GaN SJ diode shows a breakdown voltage (B V) of 1100 V, a specific on-resistance (R_ON) of 0.4 mΩ· cm2, and a SJ drift-region resistance ( R_dr) of 0.13 mΩ· cm2. Further, the device also exhibits good thermal stability with B V retained over 1 kV and R_ON dropped to 0.3 mΩ· cm2 at 125°C. The trade-off between B V and R_dr is superior to the 1D GaN limit. These results show the promise of vertical GaN SJ power devices. The self-aligned process is applicable for fabricating the heterogeneous SJ based on various wide- and ultra-wide bandgap semiconductors.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Organization:: National Science Foundation (NSF); US Department of the Navy, Office of Naval Research (ONR); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 2278907

Journal Information:: IEEE Electron Device Letters, Journal Name: IEEE Electron Device Letters Journal Issue: 1 Vol. 45; ISSN 0741-3106

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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42 ENGINEERING
charge balance
fabrication
gallium nitride
high voltage
nickel oxide
power electronics
scanning electron microscopy
self-align
semiconductor diodes
sputtering
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superjunction
thermal stability

1 kV Self-Aligned Vertical GaN Superjunction Diode

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