Andreev reflection between aluminum and graphene across van der Waals barriers

Huang, Ko-Fan; Gül, Önder; Taniguchi, Takashi; Watanabe, Kenji; Kim, Philip

doi:10.1063/10.0019423

Andreev reflection between aluminum and graphene across van der Waals barriers

Journal Article · Thu Jun 01 00:00:00 EDT 2023 · Low Temperature Physics

DOI:https://doi.org/10.1063/10.0019423· OSTI ID:2420169

Huang, Ko-Fan ^[1]; Gül, Önder; Taniguchi, Takashi; Watanabe, Kenji; Kim, Philip

OSTI

We present planar aluminum superconductor–graphene junctions whose hybrid interface is engineered for couplings ranging from tunneling to the strongly coupled regime by employing an atomically thin van der Waals tunneling barrier. Without the vdW barrier, we find Al makes strongly coupled contacts with the fully proximities graphene channel underneath. Using a large band gap hexagonal boron nitride (hBN) barrier, we find the junctions always remain in the weak coupling regime, exhibiting tunneling characteristics. Using monolayer semi-conducting transition metal dichalcogenides (TMDs) such as MoS2, we realize intermediate coupling with enhanced junction conductance due to the Andreev process. In this intermediate regime, we find that junction resistance changes in discrete steps when sweeping a perpendicular magnetic field. The period of the resistance steps in the magnetic field is inversely proportional to the junction area, suggesting the physical origin of our observations is due to magnetic-field-induced vortex formation in the planar junction.

View Accepted Manuscript (DOE)

Research Organization:: Harvard Univ., Cambridge, MA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: SC0012260

OSTI ID:: 2420169

Journal Information:: Low Temperature Physics, Journal Name: Low Temperature Physics Journal Issue: 6 Vol. 49; ISSN 1063-777X

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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