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Heterostructures based on inorganic and organic van der Waals systems

Journal Article · · APL Materials
DOI:https://doi.org/10.1063/1.4894435· OSTI ID:22303565
 [1];  [2];  [3];  [4]; ; ;  [5];  [6];  [7];  [4]
  1. Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of)
  2. KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 136-701 (Korea, Republic of)
  3. Energy Frontier Research Center (EFRC), Columbia University, New York, New York 10027 (United States)
  4. Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027 (United States)
  5. Department of Mechanical Engineering, Columbia University, New York, New York 10027 (United States)
  6. Department of Chemistry, Columbia University, New York, New York 10027 (United States)
  7. Department of Electrical Engineering, Columbia University, New York, New York 10027 (United States)
The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers. In this paper, we describe two different classes of vdW heterostructures: inorganic vdW heterostructures prepared by co-lamination and restacking; and organic-inorganic hetero-epitaxy created by physical vapor deposition of organic molecule crystals on an inorganic vdW substrate. Both types of heterostructures exhibit atomically clean vdW interfaces. Employing such vdW heterostructures, we have demonstrated various novel devices, including graphene/hexagonal boron nitride (hBN) and MoS{sub 2} heterostructures for memory devices; graphene/MoS{sub 2}/WSe{sub 2}/graphene vertical p-n junctions for photovoltaic devices, and organic crystals on hBN with graphene electrodes for high-performance transistors.
OSTI ID:
22303565
Journal Information:
APL Materials, Journal Name: APL Materials Journal Issue: 9 Vol. 2; ISSN 2166-532X; ISSN AMPADS
Country of Publication:
United States
Language:
English

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