Control of excitons in multi-layer van der Waals heterostructures

Calman, E. V.; Dorow, C. J.; Fogler, M. M.; Butov, L. V.; Hu, S.; Mishchenko, A.; Geim, A. K.

doi:10.1063/1.4943204

Control of excitons in multi-layer van der Waals heterostructures

Journal Article · Mon Mar 07 00:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4943204· OSTI ID:1470317

Calman, E. V. ^[1]; Dorow, C. J. ^[2]; Fogler, M. M. ^[2]; Butov, L. V. ^[2]; Hu, S. ^[3]; Mishchenko, A. ^[3]; Geim, A. K. ^[3]

Univ. of California at San Diego, La Jolla, CA (United States); Univ. of California, San Diego, CA (United States)
Univ. of California at San Diego, La Jolla, CA (United States)
Univ. of Manchester, Manchester (United Kingdom)

Here, we report an experimental study of excitons in a double quantum well van der Waals heterostructure made of atomically thin layers of MoS₂ and hexagonal boron nitride. The emission of neutral and charged excitons is controlled by gate voltage, temperature, and both the helicity and the power of optical excitation. Van der Waals heterostructures composed of ultrathin layers of transition metal dichalcogenides (TMD), such as MoS₂, WSe₂, etc., offer an opportunity to realize artificial materials with designable properties, forming a new platform for studying basic phenomena and developing optoelectronic devices. In the TMD structures, excitons have high binding energies and are prominent in the optical response. The energy, intensity, and polarization of exciton emission give information about the electronic, spin, and valley properties of TMD materials.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of California, San Diego, CA (United States)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: FG02-07ER46449

OSTI ID:: 1470317

Alternate ID(s):: OSTI ID: 1240472
OSTI ID: 22591405

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 108; ISSN APPLAB; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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