Scanning probe spectroscopy of sulfur vacancies and MoS 2 monolayers in side-contacted van der Waals heterostructures

Nisi, K.; Thomas, J. C.; Levashov, S.; Mitterreiter, E.; Taniguchi, T.; Watanabe, K.; Aloni, S.; Kuykendall, T. R.; Eichhorn, J.; Holleitner, A. W.; Weber-Bargioni, A.; Kastl, C.

doi:10.1088/2053-1583/ada046

Scanning probe spectroscopy of sulfur vacancies and MoS ₂ monolayers in side-contacted van der Waals heterostructures

Journal Article · Sun Dec 29 23:00:00 EST 2024 · 2D Materials

DOI:https://doi.org/10.1088/2053-1583/ada046· OSTI ID:2484214

Nisi, K.; ; ; Mitterreiter, E.; Taniguchi, T.; ; Aloni, S.; ; ; ; ;

Abstract

We investigate the interplay between vertical tunneling and lateral transport phenomena in electrically contacted van der Waals heterostructures made from monolayer MoS ₂ , hBN, and graphene. We compare data taken by low-temperature scanning tunneling spectroscopy to results from room-temperature conductive atomic force spectroscopy on monolayer MoS ₂ with sulfur vacancies and with varying hBN layers. We show that for thick hBN barrier layers, where tunneling currents into the conductive substrate are suppressed, a side-contact still enables addressing the defect states in the scanning tunneling microscopy via the lateral current flow. Few-layer hBN realizes an intermediate regime in which the competition between vertical tunneling and lateral transport needs to be considered. The latter is relevant for device structures with both a thin tunneling barrier and a side-contact to the semiconducting layers.

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Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 2484214

Alternate ID(s):: OSTI ID: 2545760

Journal Information:: 2D Materials, Journal Name: 2D Materials Journal Issue: 1 Vol. 12; ISSN 2053-1583

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United Kingdom

Language:: English

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