Tunnel junction-enabled monolithically integrated GaN micro-light emitting transistor

Rahman, Sheikh Ifatur; Awwad, Mohammad; Joishi, Chandan; Jamal-Eddine, Zane; Gunning, Brendan; Armstrong, Andrew Michael; Rajan, Siddharth

doi:10.1063/5.0213300

Tunnel junction-enabled monolithically integrated GaN micro-light emitting transistor

Journal Article · Thu May 30 00:00:00 EDT 2024 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0213300· OSTI ID:2371069

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The Ohio State Univ., Columbus, OH (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

GaN/InGaN microLEDs are a very promising technology for next-generation displays. Switching control transistors and their integration are key components in achieving high-performance, efficient displays. Monolithic integration of microLEDs with GaN switching devices provides an opportunity to control microLED output power with capacitive (voltage)-controlled rather than current-controlled schemes. This approach can greatly reduce system complexity for the driver circuit arrays while maintaining device opto-electronic performance. In this work, we demonstrate a 3-terminal GaN micro-light emitting transistor that combines a GaN/InGaN blue tunneling-based microLED with a GaN n-channel FET. Further, the integrated device exhibits excellent gate control, drain current control, and optical emission control. This work provides a promising pathway for future monolithic integration of GaN FETs with microLED to enable fast switching, high-efficiency microLED display and communication systems.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Building Technologies Office; US Department of the Navy, Office of Naval Research (ONR)

Grant/Contract Number:: NA0003525

OSTI ID:: 2371069

Report Number(s):: SAND--2024-07055J

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 124; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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display
integration
microLED
monolithic
transistor
tunnel junction

Tunnel junction-enabled monolithically integrated GaN micro-light emitting transistor

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