Steep slope transistors with threshold switching devices

Huang, Xuanqi; Zhao, Yuji; Fang, Runchen; Barnaby, Hugh James

Steep slope transistors with threshold switching devices

Patent · Tue Nov 30 04:00:00 EST 2021

OSTI ID:1860130

Huang, Xuanqi; Zhao, Yuji; Fang, Runchen; Barnaby, Hugh James

A steep-slope (SS) field effect transistor (FET) including a FET having a source region and a drain region, and a threshold switching device in direct contact with the source region or the drain region of the FET. Fabricating the steep-slope (SS) field effect transistor (FET) includes fabricating an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) having a source region and a drain region, depositing a first electrode layer directly on the source region or the drain region, depositing a threshold switching layer directly on the first electrode layer, and depositing a second electrode layer directly on the threshold switching layer.

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Research Organization:: Arizona State Univ., Scottsdale, AZ (United States)

Sponsoring Organization:: USDOE; National Aeronautic and Space Administration (NASA)

DOE Contract Number:: AR0000868

Assignee:: Arizona Board of Regents on Behalf of the Arizona State University (Scottsdale, AZ)

Patent Number(s):: 11,189,717

Application Number:: 16/739,333

OSTI ID:: 1860130

Country of Publication:: United States

Language:: English

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