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Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

Journal Article · · Nanotechnology
 [1];  [2];  [3];  [3];  [3];  [3];  [3];  [3];  [3];  [3];  [3];  [4];  [3]
  1. Arizona State Univ., Tempe, AZ (United States). School of Electrical, Computer & Energy Engineering; Arizona State University
  2. Arizona State Univ., Tempe, AZ (United States). School of Electrical, Computer & Energy Engineering; Western Digital Corporation, Milpitas, CA (United States)
  3. Arizona State Univ., Tempe, AZ (United States). School of Electrical, Computer & Energy Engineering
  4. Chinese Academy of Sciences (CAS), Suzhou (China). Key Lab. of Nanodevices and Applications, Suzhou Inst. of Nano-Tech and Nano-Bionics
+ Show Author Affiliations
We report the demonstration of a steep-slope field-effect transistor with AlGaN/GaN MIS-HEMTs employing SiO2-based threshold switching devices in series with the source. The SiO2-based threshold switching devices exhibited steep slope when changing resistance states. The integrated steep-slope transistor showed a low subthreshold swing of sub-5 mV/dec with a transition range of over 105 in the transfer characteristics in both sweep directions at room temperature, as well as the low leakage current (10-5 μA μm-1) and a high I ON/I OFF ratio (>107). Moreover, with the SiO2-based threshold switching devices we also observed a positive shift of threshold voltages of the integrated device. Results from more than 50 transfer characteristics measurements also indicate the good repeatability and practicability of such a steep-switching device, where the average steep slopes are below 10 mV/decade. In conclusion, this steep-slope transistor with oxide-based threshold switching devices can be further extended to various transistor platforms like Si and III–V and are of potential interest for the development of power switching and high frequency devices.
Research Organization:
Arizona State Univ., Tempe, AZ (United States)
Sponsoring Organization:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Grant/Contract Number:
AR0000868
OSTI ID:
1505573
Alternate ID(s):
OSTI ID: 22884996
Journal Information:
Nanotechnology, Journal Name: Nanotechnology Journal Issue: 21 Vol. 30; ISSN 0957-4484
Publisher:
IOP PublishingCopyright Statement
Country of Publication:
United States
Language:
English

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Figures / Tables (5)

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Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
Boltzmann limit
gallium nitride
steep slope
threshold switching
transistor