Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

Huang, Xuanqi; Fang, Runchen; Yang, Chen; Fu, Kai; Fu, Houqiang; Chen, Hong; Yang, Tsung-Han; Zhou, Jingan; Montes, Jossue; Kozicki, Michael; Barnaby, Hugh; Zhang, Baoshun; Zhao, Yuji

doi:10.1088/1361-6528/ab0484

Title: Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

Journal Article · Wed Mar 13 00:00:00 EDT 2019 · Nanotechnology

DOI:https://doi.org/10.1088/1361-6528/ab0484· OSTI ID:1505573

^[1]; Fang, Runchen ^[2]; Yang, Chen ^[1]; Fu, Kai ^[1];

^[1]; Chen, Hong ^[1]; Yang, Tsung-Han ^[1]; Zhou, Jingan ^[1]; Montes, Jossue ^[1]; Kozicki, Michael ^[1]; Barnaby, Hugh ^[1]; Zhang, Baoshun ^[3]; Zhao, Yuji ^[1]

Arizona State Univ., Tempe, AZ (United States). School of Electrical, Computer & Energy Engineering
Arizona State Univ., Tempe, AZ (United States). School of Electrical, Computer & Energy Engineering; Western Digital Corporation, Milpitas, CA (United States)
Chinese Academy of Sciences (CAS), Suzhou (China). Key Lab. of Nanodevices and Applications, Suzhou Inst. of Nano-Tech and Nano-Bionics

We report the demonstration of a steep-slope field-effect transistor with AlGaN/GaN MIS-HEMTs employing SiO₂-based threshold switching devices in series with the source. The SiO₂-based threshold switching devices exhibited steep slope when changing resistance states. The integrated steep-slope transistor showed a low subthreshold swing of sub-5 mV/dec with a transition range of over 10⁵ in the transfer characteristics in both sweep directions at room temperature, as well as the low leakage current (10^-5 μA μm^-1) and a high I _ON/I _OFF ratio (>10⁷). Moreover, with the SiO₂-based threshold switching devices we also observed a positive shift of threshold voltages of the integrated device. Results from more than 50 transfer characteristics measurements also indicate the good repeatability and practicability of such a steep-switching device, where the average steep slopes are below 10 mV/decade. In conclusion, this steep-slope transistor with oxide-based threshold switching devices can be further extended to various transistor platforms like Si and III–V and are of potential interest for the development of power switching and high frequency devices.

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Research Organization:: Arizona State Univ., Tempe, AZ (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0000868

OSTI ID:: 1505573

Journal Information:: Nanotechnology, Vol. 30, Issue 21; ISSN 0957-4484

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 10 works

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References (23)

NbO2 based threshold switch device with high operating temperature (>85°C) for steep-slope MOSFET (∼2mV/dec) with ultra-low voltage operation and improved delay time Park, Jaehyuk; Lee, Dongwook; Yoo, JongMyung 2017 IEEE International Electron Devices Meeting (IEDM) https://doi.org/10.1109/IEDM.2017.8268449	conference	December 2017
Steep Sub-Boltzmann Switching in AlGaN/GaN Phase-FETs With ALD VO ₂ Verma, Amit; Song, Bo; Downey, Brian IEEE Transactions on Electron Devices, Vol. 65, Issue 3 https://doi.org/10.1109/TED.2018.2795105	journal	March 2018
Ambipolar field effect in the ternary topological insulator (BixSb1–x)2Te3 by composition tuning Kong, Desheng; Chen, Yulin; Cha, Judy J. Nature Nanotechnology, Vol. 6, Issue 11 https://doi.org/10.1038/nnano.2011.172	journal	October 2011
Investigation of GaN-on-GaN vertical p - n diode with regrown p -GaN by metalorganic chemical vapor deposition Fu, Kai; Fu, Houqiang; Liu, Hanxiao Applied Physics Letters, Vol. 113, Issue 23 https://doi.org/10.1063/1.5052479	journal	December 2018
A Graphene-Based Filament Transistor with Sub-10 mVdec ⁻¹ Subthreshold Swing Tian, He; Wang, Xuefeng; Zhao, Haiming Advanced Electronic Materials, Vol. 4, Issue 4 https://doi.org/10.1002/aelm.201700608	journal	March 2018
A steep-slope transistor based on abrupt electronic phase transition Shukla, Nikhil; Thathachary, Arun V.; Agrawal, Ashish Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms8812	journal	August 2015
Nanometre-scale electronics with III–V compound semiconductors del Alamo, Jesús A. Nature, Vol. 479, Issue 7373 https://doi.org/10.1038/nature10677	journal	November 2011
SiO2 based conductive bridging random access memory Chen, Wenhao; Tappertzhofen, Stefan; Barnaby, Hugh J. Journal of Electroceramics, Vol. 39, Issue 1-4 https://doi.org/10.1007/s10832-017-0070-5	journal	March 2017
Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si ₃ N ₄ as Gate Dielectric and Passivation Layer Zhang, Zhili; Yu, Guohao; Zhang, Xiaodong IEEE Transactions on Electron Devices, Vol. 63, Issue 2 https://doi.org/10.1109/TED.2015.2510445	journal	February 2016
Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs Wu, Tian-Li; Franco, Jacopo; Marcon, Denis IEEE Transactions on Electron Devices, Vol. 63, Issue 5 https://doi.org/10.1109/TED.2016.2539341	journal	May 2016
Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array IEEE Electron Device Letters, Vol. 36, Issue 7 https://doi.org/10.1109/LED.2015.2430332	journal	July 2015
Threshold Switching and Memory Behaviors of Epitaxially Regrown GaN-on-GaN Vertical p-n Diodes With High Temperature Stability Fu, Kai; Fu, Houqiang; Huang, Xuanqi IEEE Electron Device Letters, Vol. 40, Issue 3 https://doi.org/10.1109/LED.2019.2891391	journal	March 2019
SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations Choi, Shinhyun; Tan, Scott H.; Li, Zefan Nature Materials, Vol. 17, Issue 4 https://doi.org/10.1038/s41563-017-0001-5	journal	January 2018
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices Salahuddin, Sayeef; Datta, Supriyo Nano Letters, Vol. 8, Issue 2 https://doi.org/10.1021/nl071804g	journal	February 2008
Redox processes in silicon dioxide thin films using copper microelectrodes Tappertzhofen, S.; Menzel, S.; Valov, I. Applied Physics Letters, Vol. 99, Issue 20 https://doi.org/10.1063/1.3662013	journal	November 2011
Silicon Oxide (SiO _x ): A Promising Material for Resistance Switching? Mehonic, Adnan; Shluger, Alexander L.; Gao, David Advanced Materials, Vol. 30, Issue 43 https://doi.org/10.1002/adma.201801187	journal	June 2018
Steep Slope Field-Effect Transistors With Ag/TiO ₂ -Based Threshold Switching Device Song, Jeonghwan; Woo, Jiyong; Lee, Sangheon IEEE Electron Device Letters, Vol. 37, Issue 7 https://doi.org/10.1109/LED.2016.2566661	journal	July 2016
Limits on Silicon Nanoelectronics for Terascale Integration Meindl, J. D. Science, Vol. 293, Issue 5537 https://doi.org/10.1126/science.293.5537.2044	journal	September 2001
Single-layer MoS₂ transistors Radisavljevic, B.; Radenovic, A.; Brivio, J. Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150 https://doi.org/10.1038/nnano.2010.279	journal	January 2011
Electrochemical metallization memories—fundamentals, applications, prospects Valov, Ilia; Waser, Rainer; Jameson, John R. Nanotechnology, Vol. 22, Issue 28 https://doi.org/10.1088/0957-4484/22/28/289502	journal	June 2011
A Study of Gamma-Ray Exposure of Cu–SiO$_2$ Programmable Metallization Cells Chen, W.; Barnaby, H. J.; Kozicki, M. N. IEEE Transactions on Nuclear Science, Vol. 62, Issue 6 https://doi.org/10.1109/TNS.2015.2478883	journal	December 2015
Impedance Spectroscopy of Programmable Metallization Cells With a Thin SiO ₂ Switching Layer Chen, W.; Barnaby, H. J.; Kozicki, M. N. IEEE Electron Device Letters, Vol. 37, Issue 5 https://doi.org/10.1109/LED.2016.2542239	journal	May 2016
AlGaN/GaN MIS-HEMTs of Very-Low ${V}_{\sf {{th}}}$ Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator Zhang, Zhili; Li, Weiyi; Fu, Kai IEEE Electron Device Letters, Vol. 38, Issue 2 https://doi.org/10.1109/LED.2016.2636136	journal	February 2017

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42 ENGINEERING
36 MATERIALS SCIENCE
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Title: Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

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