Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)

Journal Article · Wed Jul 15 04:00:00 EDT 2015 · AIP Advances

DOI:https://doi.org/10.1063/1.4927402· OSTI ID:22492256

Dadgar, A.; Witte, H.; Bläsing, J.; Lesnik, A.; Strittmatter, A.; Krost, A. ^[1]

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1. Otto-von-Guericke-Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg (Germany)

We report on GaN based field-effect transistor (FET) structures exhibiting sheet carrier densities of n = 2.9 10{sup 13} cm{sup −2} for high-power transistor applications. By grading the indium-content of InGaN layers grown prior to a conventional GaN/AlN/AlInN FET structure control of the channel width at the GaN/AlN interface is obtained. The composition of the InGaN layer was graded from nominally x{sub In} = 30 % to pure GaN just below the AlN/AlInN interface. Simulations reveal the impact of the additional InGaN layer on the potential well width which controls the sheet carrier density within the channel region of the devices. Benchmarking the In{sub x}Ga{sub 1−x}N/GaN/AlN/Al{sub 0.87}In{sub 0.13}N based FETs against GaN/AlN/AlInN FET reference structures we found increased maximum current densities of I{sub SD} = 1300 mA/mm (560 mA/mm). In addition, the InGaN layer helps to achieve broader transconductance profiles as well as reduced leakage currents.

• OSTI ID: 22492256
• Journal Information: AIP Advances, Journal Name: AIP Advances Journal Issue: 7 Vol. 5; ISSN AAIDBI; ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
CARRIER DENSITY
COMPUTERIZED SIMULATION
CURRENT DENSITY
ELECTRIC CONDUCTIVITY
FIELD EFFECT TRANSISTORS
GALLIUM NITRIDES
HETEROJUNCTIONS
INDIUM NITRIDES
INTERFACES
LAYERS
LEAKAGE CURRENT
POLARIZATION
SHEETS