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Title: effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis

Abstract

The effect of the layer thickness and composition in AlGaN/AlN/GaN and InAlN/AlN/GaN transistor heterostructures with a two-dimensional electron gas on their electrical and the static parameters of test transistors fabricated from such heterostructures are experimentally and theoretically studied. It is shown that the use of an InAlN barrier layer instead of AlGaN results in a more than twofold increase in the carrier concentration in the channel, which leads to a corresponding increase in the saturation current. In situ dielectric-coating deposition on the InAlN/AlN/GaN heterostructure surface during growth process allows an increase in the maximum saturation current and breakdown voltages while retaining high transconductance.

Authors:
 [1]; ; ; ;  [2];  [1]; ;  [3]; ;  [4];  [1]
  1. Russian Academy of Sciences, Submicron Heterostructures for Microelectronics Research and Engineering Center (Russian Federation)
  2. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
  3. National Research University of Electronic Technology (MIET) (Russian Federation)
  4. “Soft-Impact” Ltd. (Russian Federation)
Publication Date:
OSTI Identifier:
22649683
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 50; Journal Issue: 10; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; COATINGS; CONCENTRATION RATIO; DEPLETION LAYER; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON GAS; GALLIUM NITRIDES; HETEROJUNCTIONS; INDIUM COMPOUNDS; SURFACES; TWO-DIMENSIONAL SYSTEMS

Citation Formats

Tsatsulnikov, A. F., E-mail: andrew@beam.ioffe.ru, Lundin, V. W., Zavarin, E. E., Yagovkina, M. A., Sakharov, A. V., Usov, S. O., Zemlyakov, V. E., Egorkin, V. I., Bulashevich, K. A., Karpov, S. Yu., and Ustinov, V. M.. effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis. United States: N. p., 2016. Web. doi:10.1134/S1063782616100237.
Tsatsulnikov, A. F., E-mail: andrew@beam.ioffe.ru, Lundin, V. W., Zavarin, E. E., Yagovkina, M. A., Sakharov, A. V., Usov, S. O., Zemlyakov, V. E., Egorkin, V. I., Bulashevich, K. A., Karpov, S. Yu., & Ustinov, V. M.. effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis. United States. doi:10.1134/S1063782616100237.
Tsatsulnikov, A. F., E-mail: andrew@beam.ioffe.ru, Lundin, V. W., Zavarin, E. E., Yagovkina, M. A., Sakharov, A. V., Usov, S. O., Zemlyakov, V. E., Egorkin, V. I., Bulashevich, K. A., Karpov, S. Yu., and Ustinov, V. M.. Sat . "effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis". United States. doi:10.1134/S1063782616100237.
@article{osti_22649683,
title = {effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis},
author = {Tsatsulnikov, A. F., E-mail: andrew@beam.ioffe.ru and Lundin, V. W. and Zavarin, E. E. and Yagovkina, M. A. and Sakharov, A. V. and Usov, S. O. and Zemlyakov, V. E. and Egorkin, V. I. and Bulashevich, K. A. and Karpov, S. Yu. and Ustinov, V. M.},
abstractNote = {The effect of the layer thickness and composition in AlGaN/AlN/GaN and InAlN/AlN/GaN transistor heterostructures with a two-dimensional electron gas on their electrical and the static parameters of test transistors fabricated from such heterostructures are experimentally and theoretically studied. It is shown that the use of an InAlN barrier layer instead of AlGaN results in a more than twofold increase in the carrier concentration in the channel, which leads to a corresponding increase in the saturation current. In situ dielectric-coating deposition on the InAlN/AlN/GaN heterostructure surface during growth process allows an increase in the maximum saturation current and breakdown voltages while retaining high transconductance.},
doi = {10.1134/S1063782616100237},
journal = {Semiconductors},
issn = {1063-7826},
number = 10,
volume = 50,
place = {United States},
year = {2016},
month = {10}
}