AlN/GaN heterostructures for normally-off transistors
- Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
- Dorodnicyn Computing Centre of the Russian Academy of Sciences (Russian Federation)
- National Research University of Electronic Technology (MIET) (Russian Federation)
- Joint Stock Company “Svetlana-Electronpribor” (Russian Federation)
- Russian Academy of Sciences, Boreskov Institute of Catalysis, Siberian Branch (Russian Federation)
The structure of AlN/GaN heterostructures with an ultrathin AlN barrier is calculated for normally-off transistors. The molecular-beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with a two-dimensional electron gas is developed. Normally-off transistors with a maximum current density of ~1 A/mm, a saturation voltage of 1 V, a transconductance of 350 mS/mm, and a breakdown voltage of more than 60 V are demonstrated. Gate lag and drain lag effects are almost lacking in these transistors.
- OSTI ID:
- 22649601
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 3 Vol. 51; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer
Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN
Tri-Gate Normally-Off GaN Power MISFET
Journal Article
·
Mon Sep 15 00:00:00 EDT 2014
· Applied Physics Letters
·
OSTI ID:22303537
Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN
Journal Article
·
Mon May 12 00:00:00 EDT 2014
· Applied Physics Letters
·
OSTI ID:22273407
Tri-Gate Normally-Off GaN Power MISFET
Journal Article
·
Wed Feb 29 23:00:00 EST 2012
· IEEE Electron Device Letters
·
OSTI ID:1211400