Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment
- Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States)
- Materials Department, University of California, Santa Barbara, California 93106 (United States)
The influence of alloy clustering on fluctuations in the ground state energy of the two-dimensional electron gas (2DEG) in AlGaN/GaN and InAlN/GaN heterostructures is studied. We show that because of these fluctuations, alloy clustering degrades the mobility even when the 2DEG wavefunction does not penetrate the alloy barrier unlike alloy disorder scattering. A comparison between the results obtained for AlGaN/GaN and InAlN/GaN heterostructures shows that alloy clustering limits the 2DEG mobility to a greater degree in InAlN/GaN heterostructures. Our study also reveals that the inclusion of an AlN interlayer increases the limiting mobility from alloy clustering. Moreover, Atom probe tomography is used to demonstrate the random nature of the fluctuations in the alloy composition.
- OSTI ID:
- 22305752
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 13 Vol. 116; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALLOYS
ALUMINIUM COMPOUNDS
ALUMINIUM NITRIDES
ATOMS
ELECTRON GAS
ELECTRON MOBILITY
FLUCTUATIONS
GALLIUM NITRIDES
GROUND STATES
INCLUSIONS
INDIUM COMPOUNDS
RANDOMNESS
SCATTERING
SIMULATION
TOMOGRAPHY
TWO-DIMENSIONAL CALCULATIONS
WAVE FUNCTIONS