FET Junction Temperature Monitoring Using Novel On-Chip Solution
- North Carolina State University
A novel junction temperature monitoring sensor is proposed and experimentally demonstrated for application in MOS-gate power devices. The sensor is created using the polycide gate electrode layer of the devices to create a temperature-sensitive resistor without any additional fabrication steps. The resistor is located on the field oxide with one end grounded at the device reference terminal to isolate it from the device current and voltage transients. It allows in-situ monitoring of the device junction temperature during active circuit operation. The technology has been implemented to monitor the junction temperature of Silicon Carbide Junction Barrier Schottky Field Effect Transistors (SiC JBSFETs) with the bi-directional FET (BiDFET).
- Research Organization:
- North Carolina State University
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- DOE Contract Number:
- EE0008345
- OSTI ID:
- 2324749
- Journal Information:
- 2024 IEEE Applied Power Electronics Conference and Exposition (APEC), Journal Name: 2024 IEEE Applied Power Electronics Conference and Exposition (APEC)
- Country of Publication:
- United States
- Language:
- English
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