Magnetron sputter deposition of boron carbide in Ne and Ar plasmas

Shin, S. J.; Bayu Aji, L. B.; Bae, J. H.; Engwall, A. M.; Hammons, J. A.; Taylor, G. V.; Sohngen, L. R.; Mirkarimi, P. B.; Kucheyev, S. O.

doi:10.1063/5.0193653

Magnetron sputter deposition of boron carbide in Ne and Ar plasmas

Journal Article · Wed Feb 28 00:00:00 EST 2024 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0193653· OSTI ID:2316117

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Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
General Atomics, San Diego, CA (United States)

Conventional magnetron sputter deposition of B₄C uses Ar as the working gas. In this report we explore the magnetron sputter deposition of B₄C with a Ne plasma, which is expected to exhibit larger sputtering yields than Ar. We study properties of films deposited with different substrate tilt angles with the magnetron source operated in either direct-current (DC) or radio-frequency (RF) mode in an Ar or Ne plasma. Results show that the B₄C film properties are determined by a combination of sputtering ballistics and effects of the working gas on the plasma discharge and gas phase scattering of depositing species flux. At constant discharge power, deposition rates for Ar and Ne plasmas are similar, which is attributed to balancing effects of a higher ballistic sputtering yield of Ne and lower ion flux to the target. Both depositing B and C neutral species and bombarding ions have higher energies for the case of Ne plasmas. Films deposited with the RF-driven Ne plasma exhibit a uniform non-columnar structure, lowest oxygen impurity content, and highest mass density and mechanical properties at a cost of Ne incorporation and larger compressive residual stress.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Organization:: General Atomics; USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: 89233119CNA000063; AC52-07NA27344

OSTI ID:: 2316117

Report Number(s):: LLNL--JRNL-840448; 1061643

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 135; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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