Effects of hydrogen on sputter-deposited boron carbide films

Wong, M. S.; Taylor, G. V.; Seo, M.; Sohngen, L. R.; Merlo, J. B.; Bayu Aji, L. B.; Shin, S. J.; Nakamura, S.; Kucheyev, Sergei O.

doi:10.1063/5.0272124

Effects of hydrogen on sputter-deposited boron carbide films

Journal Article · Tue Sep 02 00:00:00 EDT 2025 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0272124· OSTI ID:3000723

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Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States); Blue Laser Fusion Inc., Goleta, CA (United States)
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Blue Laser Fusion Inc., Goleta, CA (United States)

Sputter deposition of B₄C films requires precise control over the microstructure and the nucleation and growth of nodular defects. Here, we study the properties of B₄C films deposited with substrate holder temperatures of 250, 450, or 510 °C and different substrate tilt angles by direct-current magnetron sputtering in either pure Ar or a mixture of 4% H₂ in Ar as the working gas. Results show that the addition of H₂ reduces the impedance of the plasma discharge, resulting in larger discharge currents at constant power, which is attributed to a lower ionization potential of H₂ than Ar. More importantly, films deposited with the H₂ containing plasma exhibit lower oxygen impurity incorporation, a lower density of nodular defects, and suppressed columnar microstructure. These results demonstrate the effectiveness of such a plasma doping approach to improve the properties of B₄C films.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC52-07NA27344

OSTI ID:: 3000723

Report Number(s):: LLNL--JRNL-2003888

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 138; ISSN 0021-8979; ISSN 1089-7550

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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