Effect of Bismuth on the Properties of Elastically Stressed AlGaInAsP〈Bi〉/InP Heterostructures
- Federal Research Center Southern Scientific Center, Russian Academy of Sciences (Russian Federation)
- Platov South-Russian State Polytechnic University - SRSTU NPI (Russian Federation)
The results of growing elastically stressed AlGaInAsP〈Bi〉 thin epitaxial layers from the liquid phase on indium phosphide substrates in a temperature-gradient field are discussed. The effect of bismuth on the structural perfection, the luminescence properties, and the external quantum yield of AlGaInAsP〈Bi〉/InP heterostructures is investigated.
- OSTI ID:
- 22944891
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 8 Vol. 53; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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