Doping of InP with bismuth
The influence of bismuth IVI on the electrophysical and structural characteristics of indium phosphide crystals was investigated. Single crystals were grown by the Czochralski method. In calculating the partition factor for the bismuth in the InP, its concentration in the solid phase was determined by atomic absorption analysis. The electrophysical characteristics of the Bi-doped InP crystals were found from the Hall effect by the standard method. The dislocation density in the bismuth-doped indium phosphide did not decrease perceptibly from that in undoped control specimens. The results obtained in studying the electrophysical characteristics of the Bi-doped InP crystals showed all the specimens to have p-type conductivity; doping with this isoelectronic impurity did not lead to appearance of donor or acceptor centers.
- Research Organization:
- M.I. Kalinin Leningrad Polytechnic Institute (USSR)
- OSTI ID:
- 6336169
- Journal Information:
- Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 24:3; ISSN INOMA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360602* -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
BISMUTH
CARRIER MOBILITY
CRYSTAL DEFECTS
CRYSTAL DOPING
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
CRYSTALS
CZOCHRALSKI METHOD
DISLOCATIONS
DOPED MATERIALS
ELECTRON MOBILITY
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
IMPURITIES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
IRON
LEPTONS
LINE DEFECTS
MATERIALS
METALLURGICAL EFFECTS
METALS
MICROSTRUCTURE
MOBILITY
MONOCRYSTALS
P-TYPE CONDUCTORS
PARTICLE MOBILITY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SCATTERING
SEMICONDUCTOR MATERIALS
SOLUBILITY
TRANSITION ELEMENTS