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Interaction between impurities in Bi- and Zn-doped InSb epitaxial layers

Journal Article · · Inorg. Mater. (Engl. Transl.); (United States)
OSTI ID:5975732

Upon doping indium antimonide with bismuth a solid solution if formed, in which bismuth both substitutes for antimony and enters into the interstitial positions. The interstitial state of bismuth causes small donor centers to appear. In order to compensate the bismuth donor states, we carried out additional doping of the acceptor impurity with zinc in this work. It was found that bismuth- and zinc-doped InSb layers, grown from the melt of InSb with InBi, differ from layers prepared from the melt of InSb with In/sub 2/Bi. With different ratios of lattice- to interstitial-Bi, the behavior of zinc upon heat treatment is, indeed, explained in the epitaxial, Bi- and Zn-doped InSb layers, prepared from solution-melts of the InSb-InBi and InSb-In/sub 2/Bi sections. Consequently, the interactions between Bi and Zn in epitaxial layers grown from melts of different sections are not identical and for decreasing the band gap of indium antimonide it is expedient to carry out doping with bismuth and acceptor impurity from the solution-melt of the InSb-InBi section.

Research Organization:
M.V. Lomonosov Moscow Institute of Fine Chemical Technology, USSR
OSTI ID:
5975732
Journal Information:
Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 22:7; ISSN INOMA
Country of Publication:
United States
Language:
English

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