On the Properties of Isoparametric AlInGaAsP/InP Heterostructures
- Federal Research Center, Southern Scientific Center, Russian Academy of Sciences (Russian Federation)
The effect of growth conditions on the structural perfection of AlInGaAsP/InP thin-film heterostructures is discussed. The key parameters determining the structural perfection and surface quality of thin AlInGaAsP epitaxial films grown on indium-phosphide substrates from the liquid phase in a temperature-gradient field are determined.
- OSTI ID:
- 22944941
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 7 Vol. 53; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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