Uniform radial flow epitaxy of InP and InGaAs using halide transport
A epitaxial technique called uniform radial flow epitaxy (URFE) is described for growing thin (<20[angstrom]) layer heterostructures of III-V compound semiconductors. The geometry of the URFE reactor is similar to the configuration used in vapor levitation epitaxy (VLE) but growth vapors are delivered to the top of the substrate which is placed on a paddle. This design avoids the difficulties in fabricating the quartz reactor used in VLE and can use samples of arbitrary shape. The performance of this epitaxial system was demonstrated by growing InGaAs/InP heterostructures using the halide growth process. An approach to defining the reactant gas composition is presented and was used to investigate the growth of InP epitaxial layers over a range of reactor conditions. The surface morphology and etch rate of InP substrates are reported for HCl concentration and H[sub 2] flow rate during the in situ etching used to prepare the substrate for epitaxial growth. The growth rate of InP epitaxial firms grown in this study was controlled by the concentration of indium in the gas phase. Raman Spectroscopy, Photoluminescence, and Hall effect were used to characterize the crystal structure, optical emission, and transport properties of InP films. The growth of In[sub x]Ga[sub 1[minus]x]As alloys under different reactant gas compositions was investigated. The growth rate was found to depend only on the total concentration of group III elements and the film composition to depend only on the ratio of indium to gallium in the gas phase. Parasitic wall deposition is shown to reduce the growth rate of the film and limits the control of the alloy composition. Excellent layer uniformity was obtained using the URFE reactor. Transmission Electron Spectroscopy was used to resolve InGaAs layers less than 20 [angstrom] in a multilayer InGaAs/InP heterostructure. Raman Spectroscopy was used to measure the layer strain in pseudomorphic InGaAs films (<100 [angstrom]) prepared using this reactor.
- Research Organization:
- Auburn Univ., AL (United States)
- OSTI ID:
- 6932638
- Resource Relation:
- Other Information: Thesis (Ph.D.)
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GALLIUM ARSENIDES
EPITAXY
INDIUM PHOSPHIDES
HALIDES
HETEROJUNCTIONS
RAMAN SPECTRA
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM COMPOUNDS
HALOGEN COMPOUNDS
INDIUM COMPOUNDS
JUNCTIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SPECTRA
360601* - Other Materials- Preparation & Manufacture