Patterned nanochannel sacrificial layer for semiconductor substrate reuse

Mangum, John Stanley; McMahon, William Edwin; Warren, Emily Lowell; Theingi, San

Patterned nanochannel sacrificial layer for semiconductor substrate reuse

Patent · Tue Nov 28 04:00:00 EST 2023

OSTI ID:2293930

Mangum, John Stanley; McMahon, William Edwin; Warren, Emily Lowell; Theingi, San

Described herein are systems and methods of utilizing nanochannels generated in the sacrificial layer of a semiconductor substrate to increase epitaxial lift-off speeds and facilitate reusability of GaAs substrates. The provided systems and methods may utilize unique nanochannel geometries to increase the surface area exposed to the etchant and further decrease etch times.

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC36-08GO28308

Assignee:: Alliance for Sustainable Energy, LLC (Golden, CO)

Patent Number(s):: 11,830,733

Application Number:: 17/656,762

OSTI ID:: 2293930

Country of Publication:: United States

Language:: English

References (7)

Multiple release layer study of the intrinsic lateral etch rate of the epitaxial lift-off process Voncken, M. M. A. J.; Schermer, J. J.; Bauhuis, G. J. Applied Physics A, Vol. 79, Issue 7 https://doi.org/10.1007/s00339-003-2100-1	journal	November 2004
Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics Cheng, Cheng-Wei; Shiu, Kuen-Ting; Li, Ning Nature Communications, Vol. 4, Issue 1 https://doi.org/10.1038/ncomms2583	journal	March 2013
Epitaxial lift-off for III-nitride devices Youtsey, Chris; McCarthy, Robert; Fay, Patrick III-Nitride Electronic Devices https://doi.org/10.1016/bs.semsem.2019.08.003	book	August 2019
GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies Yoon, Jongseung; Jo, Sungjin; Chun, Ik Su Nature, Vol. 465, Issue 7296 https://doi.org/10.1038/nature09054	journal	May 2010
Crystal structure and thermal expansion of α‐quartz SiO ₂ at low temperatures Lager, G. A.; Jorgensen, J. D.; Rotella, F. J. Journal of Applied Physics, Vol. 53, Issue 10 https://doi.org/10.1063/1.330062	journal	October 1982
High rate epitaxial lift-off of InGaP films from GaAs substrates Schermer, J. J.; Bauhuis, G. J.; Mulder, P. Applied Physics Letters, Vol. 76, Issue 15 https://doi.org/10.1063/1.126276	journal	April 2000
Extreme selectivity in the lift‐off of epitaxial GaAs films Yablonovitch, Eli; Gmitter, T.; Harbison, J. P. Applied Physics Letters, Vol. 51, Issue 26, p. 2222-2224 https://doi.org/10.1063/1.98946	journal	December 1987

Similar Records

Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates

Patent · Tue May 26 00:00:00 EDT 2015 · OSTI ID:1182570

Wet-Etching of Acoustically Spalled GaAs for Substrate Reuse

Journal Article · Tue Feb 06 23:00:00 EST 2024 · IEEE Journal of Photovoltaics · OSTI ID:2319206

Method of making suspended thin-film semiconductor piezoelectric devices

Patent · Sun Dec 31 23:00:00 EST 2000 · OSTI ID:873737

Patterned nanochannel sacrificial layer for semiconductor substrate reuse

Citation Formats

References (7)

Similar Records

Related Subjects