Wet-Etching of Acoustically Spalled GaAs for Substrate Reuse

Neumann, Anica N.; Coll, Pablo G.; Bertoni, Mariana I.; Steiner, Myles A.; Warren, Emily L.

doi:10.1109/JPHOTOV.2024.3355405

Wet-Etching of Acoustically Spalled GaAs for Substrate Reuse

Journal Article · 07 February 2024 · IEEE Journal of Photovoltaics

DOI:https://doi.org/10.1109/JPHOTOV.2024.3355405· OSTI ID:2319206

Neumann, Anica N.; Coll, Pablo G.; Bertoni, Mariana I.; ;

Acoustic spalling is a promising technique for substrate reuse in the fabrication of gallium arsenide (GaAs) photovoltaic cells. However, the acoustic spalling process can leave the substrate with areas of rough surface morphology that can interfere with subsequent cell growth and processing. In this work, we investigate the use of wet etchants to smooth the surface of acoustically spalled GaAs substrates. We evaluated six different etchants. Of those tested, an 8:1:1 mixture of sulfuric acid, hydrogen peroxide, and water at 30 degrees C and a moderate stirring rate showed the greatest roughness reduction per mass loss while producing the desired morphology. This etchant was then applied to an acoustically spalled 2-inch GaAs wafer. A single-junction GaAs cell was then grown via metalorganic vapor-phase epitaxy on this substrate, an acoustic spalled substrate without a smoothing etch, and an epi-ready substrate. Use of the 8:1:1 H2SO4:H2O2:H2O etchant produced cells an average efficiency of 12.8% as compared to that of 2.0% grown on the unetched acoustically spalled substrate and 16.3% grown on the epi-ready substrate. The results of this work demonstrate that wet etching is a viable method for smoothing the surface of spalled GaAs substrates, paving the way for substrate reuse via acoustic spalling at efficiencies that approach growth on epi-ready substrates.

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

DOE Contract Number:: AC36-08GO28308

OSTI ID:: 2319206

Report Number(s):: NREL/JA-5900-87558; MainId:88333; UUID:03b20bfc-ccc9-4510-9ddd-370771eddaa1; MainAdminId:72017

Journal Information:: IEEE Journal of Photovoltaics, Vol. 14, Issue 2

Country of Publication:: United States

Language:: English

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SOLAR ENERGY
etching
gallium arsenide
photovoltaic cells
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spalling

Wet-Etching of Acoustically Spalled GaAs for Substrate Reuse

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