Patterned nanochannel sacrificial layer for semiconductor substrate reuse
Patent
·
OSTI ID:2293930
Described herein are systems and methods of utilizing nanochannels generated in the sacrificial layer of a semiconductor substrate to increase epitaxial lift-off speeds and facilitate reusability of GaAs substrates. The provided systems and methods may utilize unique nanochannel geometries to increase the surface area exposed to the etchant and further decrease etch times.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-08GO28308
- Assignee:
- Alliance for Sustainable Energy, LLC (Golden, CO)
- Patent Number(s):
- 11,830,733
- Application Number:
- 17/656,762
- OSTI ID:
- 2293930
- Resource Relation:
- Patent File Date: 03/28/2022
- Country of Publication:
- United States
- Language:
- English
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