Multiple Upsets Induced by Protons in 90-nm SRAMs
Journal Article
·
· Technical Physics Letters
- National Research Centre “Kurchatov Institute”, Konstantinov Petersburg Nuclear Physics Institute (Russian Federation)
- LLC O2 Light Systems (Russian Federation)
The occurrence of single-event upsets (SEUs) in 90-nm SRAM integrated circuits irradiated by 1000-MeV protons has been investigated. The experimental data were analyzed and processed, and the results showed the possibility of multiple cell upsets in the integrated circuits studied.
- OSTI ID:
- 22927833
- Journal Information:
- Technical Physics Letters, Vol. 44, Issue 12; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7850
- Country of Publication:
- United States
- Language:
- English
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