In situ growth rate measurements by normal-incidence reflectance during MOVPE growth
We present an in situ technique for monitoring metal-organic vapor phase epitaxy growth by normal-incidence reflectance. This technique is used to calibrate the growth rate periodically and to monitor the growth process routinely. It is not only a precise tool to measure the growth rate, but also very useful in identifying unusal problems during a growth run, such as depletion of source material, deterioration of surface morphology, and problems associated with an improper growht procedure. We will also present an excellent reproducibility ({+-}0.3% over a course of more than 100 runs) of the cavity wavelength of vertical-cavity surface emitting laser structures with periodic calibration by this in situ technique.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 228515
- Report Number(s):
- SAND--96-0874C; CONF-960502--10; ON: DE96008900
- Country of Publication:
- United States
- Language:
- English
Similar Records
Highly uniform and reproducible vertical-cavity surface-emitting lasers grown by metalorganic vapor phase epitaxy with in-situ reflectometry
A virtual interface method for extracting growth rates and high temperature optical constants from thin semiconductor films using {ital in} {ital situ} normal incidence reflectance