In situ growth rate measurements by normal-incidence reflectance during MOVPE growth
We present an in situ technique for monitoring metal-organic vapor phase epitaxy growth by normal-incidence reflectance. This technique is used to calibrate the growth rate periodically and to monitor the growth process routinely. It is not only a precise tool to measure the growth rate, but also very useful in identifying unusal problems during a growth run, such as depletion of source material, deterioration of surface morphology, and problems associated with an improper growht procedure. We will also present an excellent reproducibility ({+-}0.3% over a course of more than 100 runs) of the cavity wavelength of vertical-cavity surface emitting laser structures with periodic calibration by this in situ technique.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 228515
- Report Number(s):
- SAND-96-0874C; CONF-960502-10; ON: DE96008900
- Resource Relation:
- Conference: 189. meeting of the Electrochemical Society (ECS), Los Angeles, CA (United States), 5-10 May 1996; Other Information: PBD: [1996]
- Country of Publication:
- United States
- Language:
- English
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