In situ pre-growth calibration using reflectance as a control strategy for MOCVD fabrication of device structures
In situ normal incidence reflectance, combined with a virtual interface model, is being used routinely on a commercial MOCVD reactor to measure growth rates of compound semiconductor films. The technique serves as a pre-growth calibration tool analogous to the use of RHEED in MBE as well as a real-time monitor throughout the run. An application of the method to the growth of a vertical cavity surface emitting laser (VCSEL) device structure is presented. All necessary calibration information can be obtained using a single run lasting less than one hour. Working VCSEL devices are obtained on the first try after calibration. Repeated runs have yielded {+-} 0.3% reproducibility of the Fabry-Perot cavity wavelength over the course of more than 100 runs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 270794
- Report Number(s):
- SAND--96-1684C; CONF-960813--2; ON: DE96013244
- Country of Publication:
- United States
- Language:
- English
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