Dielectric Properties and Electrical Conductivity of ({sub 1–x})TlGaSe{sub 2} · xTm Crystals

Journal Article · Sun Jul 15 04:00:00 EDT 2018 · Inorganic Materials

DOI:https://doi.org/10.1134/S0020168518070099· OSTI ID:22788060

Asadov, S. M. ^[1]; Kerimova, E. M. ^[2]

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1. Academy of Sciences of Azerbaijan, Nagiyev Institute of Catalysis and Inorganic Chemistry (Azerbaijan)
2. Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)

We have synthesized samples based on the layered compound TlGaSe{sub 2} and containing thulium: (1–x)TlGaSe{sub 2} · xTm with x = 0.001, 0.005, 0.01, and 0.02. The polycrystalline samples have been used as charges for growing crystals with the corresponding compositions by the Bridgman method. The phase composition of the (1–x)TlGaSe{sub 2} · xTm samples has been determined by X-ray diffraction analysis. Their dielectric properties have been studied in ac electric fields at frequencies in the range f = 5 × 10{sup 4} to 3.5 × 10{sup 7} Hz. We have identified the relaxation character of the dielectric permittivity, the nature of the dielectric loss, and the hopping mechanism of charge transport in the (1–x)TlGaSe{sub 2} · xTm crystals. Our results demonstrate that increasing the thulium concentration in the crystals reduces the mean hop distance and time of charge carriers and increases the ac conductivity and the density of localized states near the Fermi level in the crystals.

• OSTI ID: 22788060
• Journal Information: Inorganic Materials, Journal Name: Inorganic Materials Journal Issue: 7 Vol. 54; ISSN INOMAF; ISSN 0020-1685
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BRIDGMAN METHOD
CHARGE CARRIERS
CHARGE TRANSPORT
DIELECTRIC MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRIC FIELDS
FERMI LEVEL
GALLIUM SELENIDES
PERMITTIVITY
POLYCRYSTALS
THALLIUM SELENIDES
THULIUM
X-RAY DIFFRACTION