Effect of the Chemical Composition of TlIn{sub 1 –} {sub x}Er{sub x}S{sub 2} (0 ≤ x ≤ 0.01) Crystals on Their Dielectric Characteristics and the Parameters of Localized States
Journal Article
·
· Physics of the Solid State
- Institute of Catalysis and Inorganic Chemistry named after Academician M. F. Nagiev, Azerbaijan National Academy of Sciences (Azerbaijan)
The frequency dependences of the real (ε') and imaginary (ε'') parts of the complex dielectric permittivity, the dielectric loss tangent (tanδ), and the ac conductivity (σ{sub ac}) in the frequency range f = 5 × 10{sup 4}–3.5 × 10{sup 7} Hz have been studied in the TlIn{sub 1 –} {sub x}Er{sub x}S{sub 2} (0 ≤ x ≤ 0.01) crystals synthesized in this work. It is found that, in TlIn{sub 1 –} {sub x}Er{sub x}S{sub 2}, the relaxation dispersions of ε' and ε'' take place. The effect of the erbium concentration (Er) in the TlIn{sub 1 –} {sub x}Er{sub x}S{sub 2} crystals on their dielectric coefficients has been studied. At high frequencies, the ac conductivity of the TlIn{sub 1 –} {sub x}Er{sub x}S{sub 2} crystals obeys the relationship σ{sub ac} ~ f {sup 0.8}, which is characteristic of the hopping mechanism of the charge transfer over states localized near the Fermi level. The parameters of the states localized in the forbidden band of TlIn{sub 1 –} {sub x}Er{sub x}S{sub 2} and the influence of the chemical composition of the crystals on these parameters are estimated.
- OSTI ID:
- 22925038
- Journal Information:
- Physics of the Solid State, Journal Name: Physics of the Solid State Journal Issue: 11 Vol. 61; ISSN 1063-7834
- Country of Publication:
- United States
- Language:
- English
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